Strain-Induced Effects in Advanced MOSFETs [electronic resource] / by Viktor Sverdlov.
By: Sverdlov, Viktor [author.].
Contributor(s): SpringerLink (Online service).
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BookSeries: Computational Microelectronics: Publisher: Vienna : Springer Vienna : Imprint: Springer, 2011Description: XIV, 252p. 101 illus. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783709103821.Subject(s): Engineering | Electronics | Engineering | Electronics and Microelectronics, InstrumentationDDC classification: 621.381 Online resources: Click here to access online
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Springer eBooksSummary: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given
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