Strain-Induced Effects in Advanced MOSFETs (Record no. 108671)
[ view plain ]
| 000 -LEADER | |
|---|---|
| fixed length control field | 01938nam a22004455i 4500 |
| 001 - CONTROL NUMBER | |
| control field | 978-3-7091-0382-1 |
| 003 - CONTROL NUMBER IDENTIFIER | |
| control field | DE-He213 |
| 005 - DATE AND TIME OF LATEST TRANSACTION | |
| control field | 20140220083818.0 |
| 007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION | |
| fixed length control field | cr nn 008mamaa |
| 008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION | |
| fixed length control field | 110106s2011 au | s |||| 0|eng d |
| 020 ## - INTERNATIONAL STANDARD BOOK NUMBER | |
| International Standard Book Number | 9783709103821 |
| -- | 978-3-7091-0382-1 |
| 024 7# - OTHER STANDARD IDENTIFIER | |
| Standard number or code | 10.1007/978-3-7091-0382-1 |
| Source of number or code | doi |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7800-8360 |
| 050 #4 - LIBRARY OF CONGRESS CALL NUMBER | |
| Classification number | TK7874-7874.9 |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TJF |
| Source | bicssc |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TEC008000 |
| Source | bisacsh |
| 072 #7 - SUBJECT CATEGORY CODE | |
| Subject category code | TEC008070 |
| Source | bisacsh |
| 082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER | |
| Classification number | 621.381 |
| Edition number | 23 |
| 100 1# - MAIN ENTRY--PERSONAL NAME | |
| Personal name | Sverdlov, Viktor. |
| Relator term | author. |
| 245 10 - TITLE STATEMENT | |
| Title | Strain-Induced Effects in Advanced MOSFETs |
| Medium | [electronic resource] / |
| Statement of responsibility, etc | by Viktor Sverdlov. |
| 264 #1 - | |
| -- | Vienna : |
| -- | Springer Vienna : |
| -- | Imprint: Springer, |
| -- | 2011. |
| 300 ## - PHYSICAL DESCRIPTION | |
| Extent | XIV, 252p. 101 illus. |
| Other physical details | online resource. |
| 336 ## - | |
| -- | text |
| -- | txt |
| -- | rdacontent |
| 337 ## - | |
| -- | computer |
| -- | c |
| -- | rdamedia |
| 338 ## - | |
| -- | online resource |
| -- | cr |
| -- | rdacarrier |
| 347 ## - | |
| -- | text file |
| -- | |
| -- | rda |
| 490 1# - SERIES STATEMENT | |
| Series statement | Computational Microelectronics, |
| International Standard Serial Number | 0179-0307 |
| 520 ## - SUMMARY, ETC. | |
| Summary, etc | Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Engineering. |
| 650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Electronics. |
| 650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Engineering. |
| 650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM | |
| Topical term or geographic name as entry element | Electronics and Microelectronics, Instrumentation. |
| 710 2# - ADDED ENTRY--CORPORATE NAME | |
| Corporate name or jurisdiction name as entry element | SpringerLink (Online service) |
| 773 0# - HOST ITEM ENTRY | |
| Title | Springer eBooks |
| 776 08 - ADDITIONAL PHYSICAL FORM ENTRY | |
| Display text | Printed edition: |
| International Standard Book Number | 9783709103814 |
| 830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE | |
| Uniform title | Computational Microelectronics, |
| -- | 0179-0307 |
| 856 40 - ELECTRONIC LOCATION AND ACCESS | |
| Uniform Resource Identifier | http://dx.doi.org/10.1007/978-3-7091-0382-1 |
| 912 ## - | |
| -- | ZDB-2-ENG |
No items available.