Library Services | Technical University of Kenya

Your cart is empty.
Normal view MARC view ISBD view

Low Power and Reliable SRAM Memory Cell and Array Design [electronic resource] / edited by Koichiro Ishibashi, Kenichi Osada.

By: Ishibashi, Koichiro [editor.].
Contributor(s): Osada, Kenichi [editor.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Springer Series in Advanced Microelectronics: 31Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 2011Description: XII, 144 p. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783642195686.Subject(s): Engineering | Electronics | Engineering | Electronics and Microelectronics, Instrumentation | Engineering, generalDDC classification: 621.381 Online resources: Click here to access online
Contents:
Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
In: Springer eBooksSummary: Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.

Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.

There are no comments for this item.

Log in to your account to post a comment.

2017 | The Technical University of Kenya Library | +254(020) 2219929, 3341639, 3343672 | library@tukenya.ac.ke | Haile Selassie Avenue