Low Power and Reliable SRAM Memory Cell and Array Design (Record no. 107581)

000 -LEADER
fixed length control field 02300nam a22004815i 4500
001 - CONTROL NUMBER
control field 978-3-642-19568-6
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140220083757.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 110816s2011 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783642195686
-- 978-3-642-19568-6
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-642-19568-6
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7800-8360
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number TK7874-7874.9
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJF
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008000
Source bisacsh
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008070
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 621.381
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Ishibashi, Koichiro.
Relator term editor.
245 10 - TITLE STATEMENT
Title Low Power and Reliable SRAM Memory Cell and Array Design
Medium [electronic resource] /
Statement of responsibility, etc edited by Koichiro Ishibashi, Kenichi Osada.
264 #1 -
-- Berlin, Heidelberg :
-- Springer Berlin Heidelberg,
-- 2011.
300 ## - PHYSICAL DESCRIPTION
Extent XII, 144 p.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
490 1# - SERIES STATEMENT
Series statement Springer Series in Advanced Microelectronics,
International Standard Serial Number 1437-0387 ;
Volume number/sequential designation 31
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Preface -- Introduction -- Fundamentals of SRAM Memory Cell -- Electrical Stability -- Sensitivity Analysis -- Memory Cell Design Technique for Low Power SOC -- Array Design Techniques -- Dummy Cell Design -- Reliable Memory Cell Design -- Future Technologies.
520 ## - SUMMARY, ETC.
Summary, etc Success in the development of recent advanced semiconductor device technologies is due to the success of SRAM memory cells. This book addresses various issues for designing SRAM memory cells for advanced CMOS technology. To study LSI design, SRAM cell design is the best materials subject because issues about variability, leakage and reliability have to be taken into account for the design.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Electronics and Microelectronics, Instrumentation.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering, general.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Osada, Kenichi.
Relator term editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783642195679
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Springer Series in Advanced Microelectronics,
-- 1437-0387 ;
Volume number/sequential designation 31
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-642-19568-6
912 ## -
-- ZDB-2-ENG

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