000 03605nam a22005175i 4500
001 978-94-007-6392-0
003 DE-He213
005 20140220082942.0
007 cr nn 008mamaa
008 130425s2013 ne | s |||| 0|eng d
020 _a9789400763920
_9978-94-007-6392-0
024 7 _a10.1007/978-94-007-6392-0
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTJFD5
_2bicssc
072 7 _aTEC008010
_2bisacsh
082 0 4 _a621.3815
_223
100 1 _aIm, Seongil.
_eauthor.
245 1 0 _aPhoto-Excited Charge Collection Spectroscopy
_h[electronic resource] :
_bProbing the traps in field-effect transistors /
_cby Seongil Im, Youn-Gyoung Chang, Jae Hoon Kim.
264 1 _aDordrecht :
_bSpringer Netherlands :
_bImprint: Springer,
_c2013.
300 _aXI, 101 p. 61 illus.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringerBriefs in Physics,
_x2191-5423
505 0 _aChapter 1 Device Stability and Photo-Excited Charge-Collection Spectroscopy -- Chapter 2 Instrumentations for PECCS -- Chapter 3 PECCS measurements in Organic FETs -- Chapter 4 PECCS measurements in Oxide FETs -- Chapter 5 PECCS measurements in Nanostructure FETs -- Chapter 6 Summary and limiting factors of PECCS.
520 _aSolid state field-effect devices such as organic and inorganic-channel thin-film transistors (TFTs) have been expected to promote advances in display and sensor electronics. The operational stabilities of such TFTs are thus important, strongly depending on the nature and density of charge traps present at the channel/dielectric interface or in the thin-film channel itself. This book contains how to characterize these traps, starting from the device physics of field-effect transistor (FET). Unlike conventional analysis techniques which are away from well-resolving spectral results, newly-introduced photo-excited charge-collection spectroscopy (PECCS) utilizes the photo-induced threshold voltage response from any type of working transistor devices with organic-, inorganic-, and even nano-channels, directly probing on the traps. So, our technique PECCS has been discussed through more than ten refereed-journal papers in the fields of device electronics, applied physics, applied chemistry, nano-devices and materials science, finally finding a need to be summarized with several chapters in a short book. Device physics and instrumentations of PECCS are well addressed respectively, in the first and second chapters, for the next chapters addressing real applications to organic, oxide, and nanostructured FETs. This book would provide benefits since its contents are not only educational and basic principle-supportive but also applicable and in-house operational.
650 0 _aPhysics.
650 0 _aSystems engineering.
650 1 4 _aPhysics.
650 2 4 _aElectronic Circuits and Devices.
650 2 4 _aSolid State Physics.
650 2 4 _aCircuits and Systems.
650 2 4 _aOptics, Optoelectronics, Plasmonics and Optical Devices.
650 2 4 _aMeasurement Science and Instrumentation.
700 1 _aChang, Youn-Gyoung.
_eauthor.
700 1 _aKim, Jae Hoon.
_eauthor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9789400763913
830 0 _aSpringerBriefs in Physics,
_x2191-5423
856 4 0 _uhttp://dx.doi.org/10.1007/978-94-007-6392-0
912 _aZDB-2-PHA
999 _c99882
_d99882