000 03980nam a22004935i 4500
001 978-1-4614-8660-2
003 DE-He213
005 20140220082832.0
007 cr nn 008mamaa
008 130913s2013 xxu| s |||| 0|eng d
020 _a9781461486602
_9978-1-4614-8660-2
024 7 _a10.1007/978-1-4614-8660-2
_2doi
050 4 _aTA404.6
072 7 _aTGMT
_2bicssc
072 7 _aTEC021000
_2bisacsh
082 0 4 _a620.11
_223
100 1 _aJoy, David C.
_eauthor.
245 1 0 _aHelium Ion Microscopy
_h[electronic resource] :
_bPrinciples and Applications /
_cby David C. Joy.
264 1 _aNew York, NY :
_bSpringer New York :
_bImprint: Springer,
_c2013.
300 _aVIII, 64 p. 29 illus., 16 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringerBriefs in Materials,
_x2192-1091
505 0 _aChapter 1: Introduction to Helium Ion Microscopy -- Chapter 2: Microscopy with Ions  - A brief history -- Chapter 3: Operating the Helium Ion Microscope -- Chapter 4: Ion –Solid  Interactions  and Image Formation -- Chapter 5: Charging and  Damage -- Chapter 6: Microanalysis with the HIM -- Chapter 7: Ion Generated Damage -- Chapter 8: Working with other Ion beams -- Chapter 9: Patterning and Nanofabrication -- Conclusion -- Bibliography -- Appendix: iSE Yields,  and IONiSE  parameters for  He+ excitation  of Elements and Compounds -- Index.
520 _aHelium Ion Microscopy: Principles and Applications describes the theory and discusses the practical details of why scanning microscopes using beams of light ions – such as the Helium Ion Microscope (HIM) – are destined to become the imaging tools of choice for the 21st century. Topics covered include the principles, operation, and performance of the Gaseous Field Ion Source (GFIS), and a comparison of the optics of ion and electron beam microscopes including their operating conditions, resolution, and signal-to-noise performance. The physical principles of Ion-Induced Secondary Electron (iSE) generation by ions are discussed, and an extensive database of iSE yields for many elements and compounds as a function of incident ion species and its energy is included. Beam damage and charging are frequently outcomes of ion beam irradiation, and techniques to minimize such problems are presented. In addition to imaging, ions beams can be used for the controlled deposition, or removal, of selected materials with nanometer precision. The techniques and conditions required for nanofabrication are discussed and demonstrated. Finally, the problem of performing chemical microanalysis with ion beams is considered. Low energy ions cannot generate X-ray emissions, so alternative techniques such as Rutherford Backscatter Imaging (RBI) or Secondary Ion Mass Spectrometry (SIMS) are examined. Serves as a concise but authoritative introduction to the latest innovation in scanning microscopy Compares ion and electron beams as options for microscopy Presents a detailed physical model of ion-solid interactions and signal generation Provides a detailed database of iSE yield behavior as a function of the target ion, element, and energy
650 0 _aSpectroscopy.
650 0 _aNanotechnology.
650 0 _aSurfaces (Physics).
650 1 4 _aMaterials Science.
650 2 4 _aCharacterization and Evaluation of Materials.
650 2 4 _aSpectroscopy and Microscopy.
650 2 4 _aSpectroscopy/Spectrometry.
650 2 4 _aNanotechnology.
650 2 4 _aNanoscale Science and Technology.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9781461486596
830 0 _aSpringerBriefs in Materials,
_x2192-1091
856 4 0 _uhttp://dx.doi.org/10.1007/978-1-4614-8660-2
912 _aZDB-2-CMS
999 _c96076
_d96076