000 05155nam a22005535i 4500
001 978-1-4614-4337-7
003 DE-He213
005 20140220082814.0
007 cr nn 008mamaa
008 120922s2013 xxu| s |||| 0|eng d
020 _a9781461443377
_9978-1-4614-4337-7
024 7 _a10.1007/978-1-4614-4337-7
_2doi
050 4 _aQC350-467
050 4 _aTA1501-1820
050 4 _aQC392-449.5
050 4 _aTA1750-1750.22
072 7 _aTTB
_2bicssc
072 7 _aPHJ
_2bicssc
072 7 _aTEC030000
_2bisacsh
082 0 4 _a621.36
_223
100 1 _aUeda, Osamu.
_eeditor.
245 1 0 _aMaterials and Reliability Handbook for Semiconductor Optical and Electron Devices
_h[electronic resource] /
_cedited by Osamu Ueda, Stephen J. Pearton.
264 1 _aNew York, NY :
_bSpringer New York :
_bImprint: Springer,
_c2013.
300 _aXV, 616 p. 410 illus., 131 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
505 0 _aPreface -- Part 1. Materials Issues and Reliability of Optical Devices -- 1. Reliability Testing of Semiconductor Optical Devices -- 2. Failure Analysis of Semiconductor Optical Devices -- 3. Failure Analysis using Optical Evaluation Technique (OBIC) of LDs and APDs for Fiber Optical Communication -- 4. Reliability and Degradation of III-V Optical Devices Focusing on Gradual Degradation -- 5. Catastrophic Optical-damage in High Power, Broad-Area Laser-diodes -- 6. Reliability and Degradation of Vertical Cavity Surface Emitting Lasers -- 7. Structural Defects in GaN-based Materials and Their Relation to GaN-based Laser Diodes -- 8. InGaN Laser Diode Degradation -- 9. Radiation-enhanced Dislocation Glide - The Current Status of Research -- 10. Mechanism of Defect Reactions in Semiconductors -- Part 2. Materials Issues and Reliability of Electron Devices -- 11. Reliability Studies in the Real World -- 12. Strain Effects in AlGaN/GaN HEMTs -- 13. Reliability Issues in AlGaN/GaN High Electron Mobility Transistors -- 14. GaAs Device Reliability: High Electron Mobility Transistors and Heterojunction Bipolar Transistors -- 15. Novel Dielectrics for GaN Device Passivation And Improved Reliability -- 16. Reliability Simulation -- 17. The Analysis of Wide Bandgap Semiconductors Using Raman Spectroscopy -- 18. Reliability Study of InP-Based HBTs Operating at High Current Density -- Index.
520 _aMaterials and Reliability Handbook for Semiconductor Optical and Electron Devices provides comprehensive coverage of reliability procedures and approaches for electron and photonic devices. These include lasers and high speed electronics used in cell phones, satellites, data transmission systems and displays. Lifetime predictions for compound semiconductor devices are notoriously inaccurate due to the absence of standard protocols. Manufacturers have relied on extrapolation back to room temperature of accelerated testing at elevated temperature. This technique fails for scaled, high current density devices. Device failure is driven by electric field or current mechanisms or low activation energy processes that are masked by other mechanisms at high temperature. The Handbook addresses reliability engineering for III-V devices, including materials and electrical characterization, reliability testing, and electronic characterization. These are used to develop new simulation technologies for device operation and reliability, which allow accurate prediction of reliability as well as the design specifically for improved reliability. The Handbook emphasizes physical mechanisms rather than an electrical definition of reliability.  Accelerated aging is useful only if the failure mechanism is known. The Handbook also focuses on voltage and current acceleration stress mechanisms. Provides the first handbook to cover all aspects of compound semiconductor device reliability Systematically describes research results on reliability and materials issues of both optical and electron devices developed since 2000 Covers characterization techniques needed to understand failure mechanisms in compound semiconductor devices Includes experimental approaches in reliability studies Presents case studies of laser degradation and HEMT degradation
650 0 _aPhysics.
650 0 _aElectronics.
650 0 _aOptical materials.
650 0 _aSurfaces (Physics).
650 1 4 _aPhysics.
650 2 4 _aOptics, Optoelectronics, Plasmonics and Optical Devices.
650 2 4 _aOptical and Electronic Materials.
650 2 4 _aElectronics and Microelectronics, Instrumentation.
650 2 4 _aElectronic Circuits and Devices.
650 2 4 _aCharacterization and Evaluation of Materials.
650 2 4 _aLaser Technology, Photonics.
700 1 _aPearton, Stephen J.
_eeditor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9781461443360
856 4 0 _uhttp://dx.doi.org/10.1007/978-1-4614-4337-7
912 _aZDB-2-PHA
999 _c95115
_d95115