000 04148nam a22004815i 4500
001 978-94-007-6082-0
003 DE-He213
005 20140220082528.0
007 cr nn 008mamaa
008 130911s2014 ne | s |||| 0|eng d
020 _a9789400760820
_9978-94-007-6082-0
024 7 _a10.1007/978-94-007-6082-0
_2doi
050 4 _aTK7867-7867.5
072 7 _aTJFC
_2bicssc
072 7 _aTJFD5
_2bicssc
072 7 _aTEC008010
_2bisacsh
082 0 4 _a621.3815
_223
100 1 _aRichter, Detlev.
_eauthor.
245 1 0 _aFlash Memories
_h[electronic resource] :
_bEconomic Principles of Performance, Cost and Reliability Optimization /
_cby Detlev Richter.
264 1 _aDordrecht :
_bSpringer Netherlands :
_bImprint: Springer,
_c2014.
300 _aXXIV, 268 p. 185 illus.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Series in Advanced Microelectronics,
_x1437-0387 ;
_v40
505 0 _a1 Introduction -- 2 Fundamentals of Non-Volatile Memories -- 3 Performance Figures of Non-Volatile Memories -- 4 Fundamentals of Reliability for Flash Memories -- 5 Memory based System Development and Optimization -- 6 Memory Optimization - Key Performance Indicator Methodology -- 7 System Optimization based on Performance Indicator Models -- 8 Conclusion and Outlook -- 9 References -- Recent Publications by the Author.
520 _aThe subject of this book is to introduce a model-based quantitative performance indicator methodology applicable for performance, cost and reliability optimization of non-volatile memories. The complex example of flash memories is used to introduce and apply the methodology. It has been developed by the author based on an industrial 2-bit to 4-bit per cell flash development project. For the first time, design and cost aspects of 3D integration of flash memory are treated in this book. Cell, array, performance and reliability effects of flash memories are introduced and analyzed. Key performance parameters are derived to handle the flash complexity. A performance and array memory model is developed and a set of performance indicators characterizing architecture, cost and durability is defined.   Flash memories are selected to apply the Performance Indicator Methodology to quantify design and technology innovation. A graphical representation based on trend lines is introduced to support a requirement based product development process. The Performance Indicator methodology is applied to demonstrate the importance of hidden memory parameters for a successful product and system development roadmap.  Flash Memories offers an opportunity to enhance your understanding of product development key topics such as: ·        Reliability optimization of flash memories is all about threshold voltage margin understanding and definition; ·        Product performance parameter are analyzed in-depth in all aspects in relation to the threshold voltage operation window; ·        Technical characteristics are translated into quantitative performance indicators; ·        Performance indicators are applied to identify and quantify product and technology innovation within adjacent areas to fulfill the application requirements with an overall cost optimized solution;  ·        Cost, density, performance and durability values are combined into a common factor – performance indicator - which fulfills the application requirements
650 0 _aPhysics.
650 0 _aSystems engineering.
650 1 4 _aPhysics.
650 2 4 _aElectronic Circuits and Devices.
650 2 4 _aCircuits and Systems.
650 2 4 _aSolid State Physics.
650 2 4 _aSemiconductors.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9789400760813
830 0 _aSpringer Series in Advanced Microelectronics,
_x1437-0387 ;
_v40
856 4 0 _uhttp://dx.doi.org/10.1007/978-94-007-6082-0
912 _aZDB-2-ENG
999 _c93855
_d93855