000 03572nam a22005055i 4500
001 978-3-319-01970-3
003 DE-He213
005 20140220082510.0
007 cr nn 008mamaa
008 130930s2014 gw | s |||| 0|eng d
020 _a9783319019703
_9978-3-319-01970-3
024 7 _a10.1007/978-3-319-01970-3
_2doi
050 4 _aQC610.9-611.8
072 7 _aTJFD5
_2bicssc
072 7 _aTEC008090
_2bisacsh
082 0 4 _a537.622
_223
100 1 _aNowozin, Tobias.
_eauthor.
245 1 0 _aSelf-Organized Quantum Dots for Memories
_h[electronic resource] :
_bElectronic Properties and Carrier Dynamics /
_cby Tobias Nowozin.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2014.
300 _aXVI, 153 p. 91 illus., 9 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5053
505 0 _aFundamentals -- Charge carriers in quantum dots -- Coupling of QDs to 2D gases -- Measurement methods -- Electronic properties of and storage times in QDs -- Carrier dynamics in quantum dots coupled to a 2DHG -- Summary and Outlook -- Storage time as a function of the localization energy -- Experimental details - Setup -- Samples -- Sample Processing -- DLTS: Error of graphical analysis -- Extrapolation of storage times.
520 _aToday’s semiconductor memory market is divided between two types of memory: DRAM and Flash. Each has its own advantages and disadvantages. While DRAM is fast but volatile, Flash is non-volatile but slow. A memory system based on self-organized quantum dots (QDs) as storage node could combine the advantages of modern DRAM and Flash, thus merging the latter’s non-volatility with very fast write times.   This thesis investigates the electronic properties of and carrier dynamics in self-organized quantum dots by means of time-resolved capacitance spectroscopy and time-resolved current measurements. The first aim is to study the localization energy of various QD systems in order to assess the potential of increasing the storage time in QDs to non-volatility. Surprisingly, it is found that the major impact of carrier capture cross-sections of QDs is to influence, and at times counterbalance, carrier storage in addition to the localization energy. The second aim is to study the coupling between a layer of self-organized QDs and a two-dimensional hole gas (2DHG), which is relevant for the read-out process in memory systems. The investigation yields the discovery of the many-particle ground states in the QD ensemble. In addition to its technological relevance, the thesis also offers new insights into the fascinating field of nanostructure physics.
650 0 _aPhysics.
650 0 _aMemory management (Computer science).
650 0 _aEngineering.
650 0 _aNanotechnology.
650 1 4 _aPhysics.
650 2 4 _aSemiconductors.
650 2 4 _aNanotechnology.
650 2 4 _aElectronic Circuits and Devices.
650 2 4 _aNanotechnology and Microengineering.
650 2 4 _aMemory Structures.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783319019697
830 0 _aSpringer Theses, Recognizing Outstanding Ph.D. Research,
_x2190-5053
856 4 0 _uhttp://dx.doi.org/10.1007/978-3-319-01970-3
912 _aZDB-2-PHA
999 _c92783
_d92783