000 03438nam a22005055i 4500
001 978-3-319-01339-8
003 DE-He213
005 20140220082508.0
007 cr nn 008mamaa
008 131104s2014 gw | s |||| 0|eng d
020 _a9783319013398
_9978-3-319-01339-8
024 7 _a10.1007/978-3-319-01339-8
_2doi
050 4 _aQC610.9-611.8
072 7 _aTJFD5
_2bicssc
072 7 _aTEC008090
_2bisacsh
082 0 4 _a537.622
_223
100 1 _aGhatak, Kamakhya Prasad.
_eauthor.
245 1 0 _aDebye Screening Length
_h[electronic resource] :
_bEffects of Nanostructured Materials /
_cby Kamakhya Prasad Ghatak, Sitangshu Bhattacharya.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2014.
300 _aXXXIII, 385 p. 123 illus.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Tracts in Modern Physics,
_x0081-3869 ;
_v255
505 0 _aFrom the Contents: Part I Influence of Light Waves on the DSL in Optoelectronic Semiconductors -- Part II Influence of Quantum Confinement on the DSL in Non-Parabolic Semiconductors -- Part III Influence of Intense Electric Field on the DSL in Optoelectronic Semiconductors.
520 _aThis monograph solely investigates the Debye Screening Length (DSL) in semiconductors and their nano-structures. The materials considered are quantized structures of non-linear optical, III-V, II-VI, Ge, Te, Platinum Antimonide, stressed materials, Bismuth, GaP, Gallium Antimonide, II-V and Bismuth Telluride respectively. The DSL in opto-electronic materials and their quantum confined counterparts is studied in the presence of strong light waves and intense electric fields on the basis of newly formulated electron dispersion laws that control the studies of such quantum effect devices. The suggestions for the experimental determination of 2D and 3D DSL and the importance of measurement of band gap in optoelectronic materials under intense built-in electric field in nano devices and strong external photo excitation (for measuring photon induced physical properties) have also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the DSL and the DSL in heavily doped semiconductors and their nanostructures has been investigated. This monograph contains 150 open research problems which form the integral part of the text and are useful for both PhD students and researchers in the fields of solid-state sciences, materials science, nano-science and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures.
650 0 _aPhysics.
650 0 _aOptical materials.
650 0 _aNanotechnology.
650 1 4 _aPhysics.
650 2 4 _aSemiconductors.
650 2 4 _aOptical and Electronic Materials.
650 2 4 _aSolid State Physics.
650 2 4 _aNanotechnology.
650 2 4 _aNanoscale Science and Technology.
700 1 _aBhattacharya, Sitangshu.
_eauthor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783319013381
830 0 _aSpringer Tracts in Modern Physics,
_x0081-3869 ;
_v255
856 4 0 _uhttp://dx.doi.org/10.1007/978-3-319-01339-8
912 _aZDB-2-PHA
999 _c92636
_d92636