000 03078nam a22004815i 4500
001 978-3-319-01165-3
003 DE-He213
005 20140220082508.0
007 cr nn 008mamaa
008 131007s2014 gw | s |||| 0|eng d
020 _a9783319011653
_9978-3-319-01165-3
024 7 _a10.1007/978-3-319-01165-3
_2doi
050 4 _aTK7888.4
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
082 0 4 _a621.3815
_223
100 1 _aSrivastava, Viranjay M.
_eauthor.
245 1 0 _aMOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch
_h[electronic resource] /
_cby Viranjay M. Srivastava, Ghanshyam Singh.
264 1 _aCham :
_bSpringer International Publishing :
_bImprint: Springer,
_c2014.
300 _aXV, 199 p. 55 illus., 45 illus. in color.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aAnalog Circuits and Signal Processing,
_x1872-082X ;
_v122
505 0 _aIntroduction -- Design of Double-Pole Four-Throw RF Switch -- Design of Double-Gate MOSFET -- Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET -- Cylindrical Surrounding Double-Gate RF MOSFET -- Hafnium Dioxide Based Double-Pole Four-Throw Double-Gate RF CMOS Switch -- Testing of MOSFET Surfaces Using Image Acquisition -- Conclusions and Future Scope.
520 _aThis book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET.  The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET  is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.  ·         Provides a single-source reference to the latest technologies for the design of Double-gate MOSFET, Cylindrical Surrounding double-gate MOSFET and HFO2 based MOSFET; ·         Explains the design of RF switches using the technologies presented and simulates switches; ·         Verifies parameters and discusses feasibility of devices and switches.
650 0 _aEngineering.
650 0 _aTelecommunication.
650 0 _aSystems engineering.
650 1 4 _aEngineering.
650 2 4 _aCircuits and Systems.
650 2 4 _aCommunications Engineering, Networks.
650 2 4 _aSemiconductors.
700 1 _aSingh, Ghanshyam.
_eauthor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9783319011646
830 0 _aAnalog Circuits and Signal Processing,
_x1872-082X ;
_v122
856 4 0 _uhttp://dx.doi.org/10.1007/978-3-319-01165-3
912 _aZDB-2-ENG
999 _c92599
_d92599