000			01576nam a22004695i 4500
001			978-3-540-31479-0
003			DE-He213
005			20130515021332.0
007			cr nn 008mamaa
008			100806s2005 gw | s |||| 0|eng d
020			_a9783540314790 _9978-3-540-31479-0
024	7		_a10.1007/b99517 _2doi
050		4	_aQC750-766
050		4	_aQC764.5-766
072		7	_aPHK _2bicssc
072		7	_aSCI038000 _2bisacsh
082	0	4	_a538 _223
100	1		_aOkuyama, Masanori.
245	1	0	_aFerroelectric Thin Films _h[electronic resource] : _bBasic Properties and Device Physics for Memory Applications / _cedited by Masanori Okuyama, Yoshihiro Ishibashi.
260			_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2005.
300			_bdigital.
490	0		_aTopics in Applied Physics, _x0303-4216 ; _v98
650		0	_aPhysics.
650		0	_aCrystallography.
650		0	_aMagnetism.
650		0	_aElectronics.
650		0	_aMaterials.
650	1	4	_aPhysics.
650	2	4	_aMagnetism, Magnetic Materials.
650	2	4	_aCrystallography.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
650	2	4	_aMetallic Materials.
650	2	4	_aPhysics and Applied Physics in Engineering.
700	1		_aIshibashi, Yoshihiro.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783540241638
830		0	_aTopics in Applied Physics, _x0303-4216 ; _v98
856	4	0	_uhttp://dx.doi.org/10.1007/b99517
912			_aZDB-2-PHA
999			_c76242 _d76242