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040 _aOCoLC-P
_beng
_erda
_epn
_cOCoLC-P
020 _a9780429621598
_q(electronic bk.)
020 _a0429621590
_q(electronic bk.)
020 _a9780429619441
_q(ePub ebook)
020 _a0429619448
020 _a9780429617294
_q(Mobipocket ebook)
020 _a0429617291
020 _a9780429055324
_q(ebook)
020 _a0429055323
020 _z9781498782234
020 _z149878223X
024 7 _a10.1201/9780429055324
_2doi
035 _a(OCoLC)1084727372
_z(OCoLC)1084318065
035 _a(OCoLC-P)1084727372
050 4 _aQD117.R3
072 7 _aSCI
_x057000
_2bisacsh
072 7 _aSCI
_x055000
_2bisacsh
072 7 _aTEC
_x064000
_2bisacsh
072 7 _aPHP
_2bicssc
082 0 4 _a539.77
_223
100 1 _aViá, Cinzia da,
_eauthor.
245 1 0 _aRadiation sensors with 3D electrodes /
_cCinzia Da Viá, Gian-Franco Dalla Betta, Sherwood Parker.
264 1 _aBoca Raton :
_bCRC Press,
_c2019.
300 _a1 online resource (1 volume) :
_billustrations (black and white).
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
490 1 _aSeries in sensors
505 0 _aCover; Half Title; Series Page; Title Page; Copyright Page; Dedication; Contents; About the Authors; Acknowledgments; Chapter 1: Introduction; Chapter 2: Silicon Radiation Sensors; 2.1. INTRODUCTION; 2.2. INTERACTION OF RADIATION WITH SILICON; 2.2.1. Charged Particles; 2.2.2. Photons; 2.2.2.1. Photon Energy Close to the Energy Gap; 2.2.2.2. Photon Energy Much Higher Than the Energy Gap; 2.2.3. Neutrons; 2.3. SEMICONDUCTOR PHYSICS; 2.3.1. Silicon as a Detector Material; 2.3.2. The p-n Junction in Reverse Bias; 2.4. POSITION-SENSITIVE SENSORS; 2.4.1. Pad (Diode); 2.4.2. Strip Sensors
505 8 _a2.4.3. Pixel Sensors2.4.4. Drift Detector; 2.5. SIGNAL FORMATION; 2.5.1. Charge Motion; 2.5.2. Induced Signals; 2.6. READOUT ELECTRONICS AND NOISE; 2.6.1. Energy Resolution; 2.6.2. Electronic Noise; Chapter 3: Radiation Effects in Silicon Sensors; 3.1. INTRODUCTION; 3.2. RADIATION DAMAGE IN SILICON; 3.2.1. Surface Damage; 3.2.2. Bulk Damage; 3.3. CAN RADIATION DAMAGE BE CONTROLLED?; 3.3.1. Surface Damage; 3.3.2. Bulk Damage; Chapter 4: 3D Sensors; 4.1. BASIC CONCEPT; 4.2. DEVICE SIMULATIONS; 4.3. EXPERIMENTAL RESULTS; 4.4. ALTERNATIVE 3D DESIGNS; 4.4.1. Single-Type-Column 3D Detectors
505 8 _a4.4.2. Double-Sided Double-Type-Column 3D detectors4.4.3. Trenched Electrodes; 4.4.4. The Pixelated Vertical Drift Detector; 4.4.5. Dual Readout in 3D Sensors; 4.5. ACTIVE AND SLIM EDGES IN 3D SENSORS; Chapter 5: Fabrication Technologies; 5.1. GENERAL ASPECTS OF SILICON DETECTOR PROCESSING; 5.1.1. Materials; 5.1.2. Technological Aspects; 5.1.2.1. Passivation Oxide Deposition; 5.1.2.2. Silicon Nitride and Polysilicon Deposition; 5.1.2.3. Junction Fabrication; 5.1.2.4. Etching and Metallization; 5.1.2.5. Gettering; 5.2. DEEP ETCHING TECHNIQUES; 5.2.1. Deep Reactive Ion Etching
505 8 _a5.2.2. Other Etching Techniques5.3. FULL 3D DETECTORS WITH ACTIVE EDGE; 5.4. ALTERNATIVE APPROACHES; 5.5. RECENT DEVELOPMENTS; Chapter 6: Radiation Hardness in 3D Sensors; 6.1. INTRODUCTION; 6.2. SOME HISTORY: INITIAL IRRADIATION TESTS; 6.3. DEVICES WITH A DIFFERENT ELECTRODE CONFIGURATION; 6.4. RADIATION HARDNESS OF 3D-STC (OR SEMI-3D) DETECTORS (FBK, VTT); 6.5. RADIATION HARDNESS OF 3D-DDTC DETECTORS (FBK, CNM); Chapter 7: The Industrialization Phase; 7.1. INTRODUCTION; 7.2. DESIGN SPECIFICATIONS AND COMMON WAFER LAYOUT; 7.3. SENSOR ELECTRICAL SPECIFICATIONS
505 8 _a7.4. PROTOTYPE FABRICATION AND IBL SENSOR PRODUCTION STRATEGY7.5. EXPERIMENTAL RESULTS; 7.6. LESSONS LEARNED; Chapter 8: Planar Active-Edge Sensors; 8.1. INTRODUCTION; 8.2. DIFFERENT APPROACHES TO EDGELESS SENSORS; 8.2.1. Early Attempts; 8.2.2. The Scribe-Cleave-Passivate Technique; 8.3. ACTIVE-EDGE TECHNOLOGIES; 8.4. RESULTS; 8.5. ALTERNATIVE SOLUTIONS FOR SLIM EDGES; Chapter 9: Applications; 9.1. HIGH-ENERGY PHYSICS; 9.2. 3D SPEED PROPERTIES; 9.3. MEDICAL IMAGING; 9.4. PROTEIN CRYSTALLOGRAPHY AND MICRODOSIMETRY; 9.5. NEUTRON DETECTORS
520 _aWritten by the leading names in this field, this book introduces the technical properties, design and fabrication details, measurement results, and applications of three-dimensional silicon radiation sensors. Such devices are currently used in the ATLAS experiment at the European Centre for Particle Physics (CERN) for particle tracking in high energy physics. These sensors are the radiation hardest devices ever fabricated and have applications in ground-breaking research in neutron detection, medical dosimetry and space technologies and more. Chapters explore the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication, in addition to a providing historical overview of the field. This book will be a key reference for students and researchers working with sensor technologies. Features: The first book dedicated to this unique and growing subject area, which is also widely applicable in high-energy physics, medical physics, space science and beyond Authored by Sherwood Parker, the inventor of the concept of 3D detectors; Cinzia Da Viaa, who has brought 3DSi technology to application; and Gian-Franco Dalla Betta, a leading figure in the design and fabrication technology of these devices Explains to non-experts the essential features of silicon particle detectors, interactions of radiation with matter, radiation damage effects, and micro-fabrication
588 _aOCLC-licensed vendor bibliographic record.
650 0 _aRadiation
_xMeasurement
_xInstruments.
650 0 _aNuclear counters.
650 0 _aElectrodes.
650 0 _aSilicon diodes.
650 7 _aSCIENCE / Physics / Quantum Theory
_2bisacsh
650 7 _aSCIENCE / Physics
_2bisacsh
700 1 _aBetta, G. F.
_q(Gian-Franco Dalla),
_eauthor.
700 1 _aParker, Sherwood,
_eauthor.
856 4 0 _3Taylor & Francis
_uhttps://www.taylorfrancis.com/books/9780429055324
856 4 2 _3OCLC metadata license agreement
_uhttp://www.oclc.org/content/dam/oclc/forms/terms/vbrl-201703.pdf
999 _c126234
_d126234