000 03437nam a22004575i 4500
001 978-90-481-3280-5
003 DE-He213
005 20140220084557.0
007 cr nn 008mamaa
008 100301s2010 ne | s |||| 0|eng d
020 _a9789048132805
_9978-90-481-3280-5
024 7 _a10.1007/978-90-481-3280-5
_2doi
050 4 _aTK7888.4
072 7 _aTJFC
_2bicssc
072 7 _aTEC008010
_2bisacsh
082 0 4 _a621.3815
_223
100 1 _aFulde, Michael.
_eauthor.
245 1 0 _aVariation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies
_h[electronic resource] /
_cby Michael Fulde.
264 1 _aDordrecht :
_bSpringer Netherlands,
_c2010.
300 _aX, 127p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aSpringer Series in Advanced Microelectronics,
_x1437-0387 ;
_v28
505 0 _aAnalog Properties of Multi-Gate MOSFETs -- High-k Related Design Issues -- Multi-Gate Related Design Aspects -- Multi-Gate Tunneling FETs -- Conclusions and Outlook.
520 _aSince scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies. Closing the gap from technology to design a detailed insight into circuit performance trade-offs related to multi-gate and high-k device specifics is provided. The new effect of transient threshold voltage variations is described with an equivalent model that allows a systematic assessment of the consequences on circuit level and the development of countermeasures to compensate for performance degradation in comparators and A/D converters. Key analog, mixed-signal and RF building blocks are realized in high-k multi-gate technology and benchmarked against planar bulk. Performance and area benefits, enabled by advantageous multi-gate device properties are analytically and experimentally quantified for reference circuits, operational amplifiers and D/A converters. This is based on first time silicon investigations of complex mixed-signal building blocks as D/A converter and PLL with multi-gate devices. As another first, the integration of tunnel transistors in a multi-gate process is described, enabling devices with promising scaling and analog properties. Based on these devices a novel reference circuit is proposed which features low power consumption.
650 0 _aEngineering.
650 0 _aSystems engineering.
650 0 _aOptical materials.
650 1 4 _aEngineering.
650 2 4 _aCircuits and Systems.
650 2 4 _aOptical and Electronic Materials.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9789048132799
830 0 _aSpringer Series in Advanced Microelectronics,
_x1437-0387 ;
_v28
856 4 0 _uhttp://dx.doi.org/10.1007/978-90-481-3280-5
912 _aZDB-2-ENG
999 _c113307
_d113307