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001 978-90-481-2877-8
003 DE-He213
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007 cr nn 008mamaa
008 100627s2010 ne | s |||| 0|eng d
020 _a9789048128778
_9978-90-481-2877-8
024 7 _a10.1007/978-90-481-2877-8
_2doi
050 4 _aQC350-467
050 4 _aTA1501-1820
050 4 _aQC392-449.5
050 4 _aTA1750-1750.22
072 7 _aTTB
_2bicssc
072 7 _aPHJ
_2bicssc
072 7 _aTEC030000
_2bisacsh
082 0 4 _a621.36
_223
100 1 _aO’Donnell, Kevin.
_eeditor.
245 1 0 _aRare Earth Doped III-Nitrides for Optoelectronic and Spintronic Applications
_h[electronic resource] /
_cedited by Kevin O’Donnell, Volkmar Dierolf.
264 1 _aDordrecht :
_bSpringer Netherlands,
_c2010.
300 _aXVI, 355 p.
_bonline resource.
336 _atext
_btxt
_2rdacontent
337 _acomputer
_bc
_2rdamedia
338 _aonline resource
_bcr
_2rdacarrier
347 _atext file
_bPDF
_2rda
490 1 _aTopics in Applied Physics,
_x0303-4216 ;
_v124
505 0 _aTheoretical Modelling of Rare Earth Dopants in GaN -- RE Implantation and Annealing of III-Nitrides -- Lattice Location of RE Impurities in IIINitrides -- Electroluminescent Devices Using RE-Doped III-Nitrides -- Er-Doped GaN and InxGa1-xN for Optical Communications -- Rare-Earth-Doped GaN Quantum Dot -- Visible Luminescent RE-doped GaN, AlGaN and AlInN -- Combined Excitation Emission Spectroscopy (CEES) of RE Ions in Gallium Nitride -- Excitation Mechanisms of RE Ions in Semiconductors -- High-Temperature Ferromagnetism in the Super-Dilute Magnetic Semiconductor GaN:Gd -- Summary and Prospects for Future Work.
520 _aThis book provides a snapshot of recent progress in the field of rare-earth-doped group III-nitride semiconductors, especially GaN, but extending to AlN and the alloys AlGaN, AlInN and InGaN. This material class is currently enjoying an upsurge in interest due to its ideal suitability for both optoelectronic and spintronic applications. The text first introduces the reader to the historical background and the major theoretical challenges presented when 4f electron systems are embedded in a semiconductor matrix. It details the preparation of samples for experimental study, either by in-situ growth or ion implantation/annealing, and describes their microscopic structural characterisation. Optical spectroscopy is a dominant theme, complicated by site multiplicity, whether in homogeneous hosts or in heterostructures such as quantum dots, and enlivened by the abiding fascination of the energy transfer mechanism between the host material and the lumophore. Finally, the rapid progress towards prospective optoelectronic and spintronic devices is presented along with several examples.
650 0 _aPhysics.
650 1 4 _aPhysics.
650 2 4 _aOptics, Optoelectronics, Plasmonics and Optical Devices.
650 2 4 _aQuantum Optics.
700 1 _aDierolf, Volkmar.
_eeditor.
710 2 _aSpringerLink (Online service)
773 0 _tSpringer eBooks
776 0 8 _iPrinted edition:
_z9789048128761
830 0 _aTopics in Applied Physics,
_x0303-4216 ;
_v124
856 4 0 _uhttp://dx.doi.org/10.1007/978-90-481-2877-8
912 _aZDB-2-PHA
999 _c113230
_d113230