000			03133nam a22005175i 4500
001			978-1-4419-0552-9
003			DE-He213
005			20140220084502.0
007			cr nn 008mamaa
008			100301s2010 xxu| s |||| 0|eng d
020			_a9781441905529 _9978-1-4419-0552-9
024	7		_a10.1007/978-1-4419-0552-9 _2doi
050		4	_aTK7800-8360
050		4	_aTK7874-7874.9
072		7	_aTJF _2bicssc
072		7	_aTEC008000 _2bisacsh
072		7	_aTEC008070 _2bisacsh
082	0	4	_a621.381 _223
100	1		_aSun, Yongke. _eauthor.
245	1	0	_aStrain Effect in Semiconductors _h[electronic resource] : _bTheory and Device Applications / _cby Yongke Sun, Scott E. Thompson, Toshikazu Nishida.
250			_aFirst.
264		1	_aBoston, MA : _bSpringer US, _c2010.
300			_bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aOverview: The Age of Strained Devices -- Band Structures of Strained Semiconductors -- Stress, Strain, Piezoresistivity, and Piezoelectricity -- Strain and Semiconductor Crystal Symmetry -- Band Structures of Strained Semiconductors -- Low-Dimensional Semiconductor Structures -- Transport Theory of Strained Semiconductors -- Semiconductor Transport -- Strain in Semiconductor Devices -- Strain in Electron Devices -- Piezoresistive Strain Sensors -- Strain Effects on Optoelectronic Devices.
520			_aStrain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. The book discusses relevant applications of strain while also focusing on the fundamental physics as they pertain to bulk, planar, and scaled nano-devices. Lead authors Yongke Sun, Scott Thompson and Toshikazu Nishida also: Treat strain physics at both the qualitative overview level as well as provide detailed fundamentals Explain strain physics relevant to logic devices as well as strain-based MEMS This book is relevant to current strained Si logic technology, as well as for understanding the physics and scaling of future strain nano-scale devices. It is perfect for practicing device engineers at semiconductor manufacturers, as well as graduate students studying device physics at universities.
650		0	_aEngineering.
650		0	_aElectronics.
650		0	_aOptical materials.
650	1	4	_aEngineering.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
650	2	4	_aSolid State Physics.
650	2	4	_aSpectroscopy and Microscopy.
650	2	4	_aOptical and Electronic Materials.
700	1		_aThompson, Scott E. _eauthor.
700	1		_aNishida, Toshikazu. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9781441905512
856	4	0	_uhttp://dx.doi.org/10.1007/978-1-4419-0552-9
912			_aZDB-2-ENG
999			_c110213 _d110213