| 000 | 02808nam a22004935i 4500 | ||
|---|---|---|---|
| 001 | 978-3-642-16304-3 | ||
| 003 | DE-He213 | ||
| 005 | 20140220083748.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 110112s2011 gw | s |||| 0|eng d | ||
| 020 |
_a9783642163043 _9978-3-642-16304-3 |
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| 024 | 7 |
_a10.1007/978-3-642-16304-3 _2doi |
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| 050 | 4 | _aTA1750-1750.22 | |
| 072 | 7 |
_aTJFD _2bicssc |
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| 072 | 7 |
_aTEC021000 _2bisacsh |
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| 072 | 7 |
_aTEC008080 _2bisacsh |
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| 082 | 0 | 4 |
_a620.11295 _223 |
| 082 | 0 | 4 |
_a620.11297 _223 |
| 100 | 1 |
_aBentarzi, Hamid. _eauthor. |
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| 245 | 1 | 0 |
_aTransport in Metal-Oxide-Semiconductor Structures _h[electronic resource] : _bMobile Ions Effects on the Oxide Properties / _cby Hamid Bentarzi. |
| 264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg, _c2011. |
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| 300 |
_aXIV, 106 p. _bonline resource. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 347 |
_atext file _bPDF _2rda |
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| 490 | 1 |
_aEngineering Materials, _x1612-1317 |
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| 505 | 0 | _aIntroduction -- The MOS Structure -- The MOS Oxide and Its Defects -- Review of Transport Mechanism in Thin Oxides of MOS Devices -- Experimental Techniques -- Theoretical Approaches of Mobile Ions Density Distribution Determination -- Theoretical Model of Mobile Ions Distribution and Ionic Current in the MOS Oxide. | |
| 520 | _aThis book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures. | ||
| 650 | 0 | _aOptical materials. | |
| 650 | 0 | _aSurfaces (Physics). | |
| 650 | 1 | 4 | _aMaterials Science. |
| 650 | 2 | 4 | _aOptical and Electronic Materials. |
| 650 | 2 | 4 | _aSemiconductors. |
| 650 | 2 | 4 | _aCharacterization and Evaluation of Materials. |
| 650 | 2 | 4 | _aSolid State Physics. |
| 710 | 2 | _aSpringerLink (Online service) | |
| 773 | 0 | _tSpringer eBooks | |
| 776 | 0 | 8 |
_iPrinted edition: _z9783642163036 |
| 830 | 0 |
_aEngineering Materials, _x1612-1317 |
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| 856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-3-642-16304-3 |
| 912 | _aZDB-2-CMS | ||
| 999 |
_c107143 _d107143 |
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