000			03336nam a22005055i 4500
001			978-3-642-11125-9
003			DE-He213
005			20140220083743.0
007			cr nn 008mamaa
008			110113s2011 gw | s |||| 0|eng d
020			_a9783642111259 _9978-3-642-11125-9
024	7		_a10.1007/978-3-642-11125-9 _2doi
050		4	_aTK7800-8360
050		4	_aTK7874-7874.9
072		7	_aTJF _2bicssc
072		7	_aTEC008000 _2bisacsh
072		7	_aTEC008070 _2bisacsh
082	0	4	_a621.381 _223
100	1		_aLutz, Josef. _eauthor.
245	1	0	_aSemiconductor Power Devices _h[electronic resource] : _bPhysics, Characteristics, Reliability / _cby Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker.
264		1	_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg : _bImprint: Springer, _c2011.
300			_aX, 608p. 250 illus. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
505	0		_aPower Semiconductor Devices – Key Components for Efficient Electrical Energy Conversion Systems -- Semiconductor Properties -- pn - Junctions -- Short introduction to power device technology -- pin-Diodes -- Schottky Diodes -- Bipolar Transistors -- Thyristors -- MOS Transistors -- IGBTs -- Packaging and Reliability of Power Devices -- Destructive Mechanisms in Power Devices -- Power Device Induced Oscillations and Electromagnetic Disturbances -- Power Electronic Systems -- Appendix -- Index.
520			_aSemiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
650		0	_aEngineering.
650		0	_aElectronics.
650		0	_aProduction of electric energy or power.
650	1	4	_aEngineering.
650	2	4	_aElectronics and Microelectronics, Instrumentation.
650	2	4	_aPower Electronics, Electrical Machines and Networks.
650	2	4	_aCondensed Matter Physics.
700	1		_aSchlangenotto, Heinrich. _eauthor.
700	1		_aScheuermann, Uwe. _eauthor.
700	1		_aDe Doncker, Rik. _eauthor.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9783642111242
856	4	0	_uhttp://dx.doi.org/10.1007/978-3-642-11125-9
912			_aZDB-2-ENG
999			_c106815 _d106815