000			03299nam a22005175i 4500
001			978-1-4419-7817-2
003			DE-He213
005			20140220083725.0
007			cr nn 008mamaa
008			110406s2011 xxu| s |||| 0|eng d
020			_a9781441978172 _9978-1-4419-7817-2
024	7		_a10.1007/978-1-4419-7817-2 _2doi
050		4	_aTP807-823
050		4	_aTA418.9.C6
072		7	_aTDCQ _2bicssc
072		7	_aTEC021000 _2bisacsh
082	0	4	_a620.14 _223
100	1		_aWalkosz, Weronika. _eauthor.
245	1	0	_aAtomic Scale Characterization and First-Principles Studies of Si₃N₄ Interfaces _h[electronic resource] / _cby Weronika Walkosz.
264		1	_aNew York, NY : _bSpringer New York, _c2011.
300			_aXIV, 110 p. _bonline resource.
336			_atext _btxt _2rdacontent
337			_acomputer _bc _2rdamedia
338			_aonline resource _bcr _2rdacarrier
347			_atext file _bPDF _2rda
490	1		_aSpringer Theses
505	0		_aSilicon Nitride Ceramics -- Theoretical Methods and Approximations -- Overview of Experimental Tools -- Structural Energetics of β−Si3N4 (1010) Surfaces -- Atomic Resolution Study of the Interfacial Bonding at SI3N4/CEO2−∂ Grain Boundaries -- Atomic Resolution Study of β−Si3N4/ SIO2 Interfaces -- Imagine Bulk α -SI3N4 -- Conclusions and Future Work -- Appendices -- Cited Literature.
520			_aThis thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline β−Si3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF).  These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications.  The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before.  The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.
650		0	_aMicroreactors.
650		0	_aChemistry, Physical organic.
650		0	_aMaterials.
650	1	4	_aMaterials Science.
650	2	4	_aCeramics, Glass, Composites, Natural Methods.
650	2	4	_aSpectroscopy and Microscopy.
650	2	4	_aPhysical Chemistry.
650	2	4	_aStructural Materials.
650	2	4	_aAtomic/Molecular Structure and Spectra.
650	2	4	_aMicroengineering.
710	2		_aSpringerLink (Online service)
773	0		_tSpringer eBooks
776	0	8	_iPrinted edition: _z9781441978165
830		0	_aSpringer Theses
856	4	0	_uhttp://dx.doi.org/10.1007/978-1-4419-7817-2
912			_aZDB-2-CMS
999			_c105866 _d105866