| 000 | 02605nam a22004335i 4500 | ||
|---|---|---|---|
| 001 | 978-3-642-30108-7 | ||
| 003 | DE-He213 | ||
| 005 | 20140220083318.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 120626s2012 gw | s |||| 0|eng d | ||
| 020 |
_a9783642301087 _9978-3-642-30108-7 |
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| 024 | 7 |
_a10.1007/978-3-642-30108-7 _2doi |
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| 050 | 4 | _aQC610.9-611.8 | |
| 072 | 7 |
_aTJFD5 _2bicssc |
|
| 072 | 7 |
_aTEC008090 _2bisacsh |
|
| 082 | 0 | 4 |
_a537.622 _223 |
| 100 | 1 |
_aBogdanowicz, Janusz. _eauthor. |
|
| 245 | 1 | 0 |
_aPhotomodulated Optical Reflectance _h[electronic resource] : _bA Fundamental Study Aimed at Non-Destructive Carrier Profiling in Silicon / _cby Janusz Bogdanowicz. |
| 264 | 1 |
_aBerlin, Heidelberg : _bSpringer Berlin Heidelberg : _bImprint: Springer, _c2012. |
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| 300 |
_aXXIII, 201 p. 74 illus., 23 illus. in color. _bonline resource. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 347 |
_atext file _bPDF _2rda |
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| 490 | 1 |
_aSpringer Theses, Recognizing Outstanding Ph.D. Research, _x2190-5053 |
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| 505 | 0 | _aTheory of Perturbation of the Reflectance -- Theory of Perturbation of the Refractive Index -- Theory of Carrier and Heat Transport in Homogeneously Doped Silicon -- Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers -- Assessment of the Model -- Application of the Model to Carrier Profling. | |
| 520 | _aOne of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation. | ||
| 650 | 0 | _aPhysics. | |
| 650 | 1 | 4 | _aPhysics. |
| 650 | 2 | 4 | _aSemiconductors. |
| 650 | 2 | 4 | _aApplied and Technical Physics. |
| 710 | 2 | _aSpringerLink (Online service) | |
| 773 | 0 | _tSpringer eBooks | |
| 776 | 0 | 8 |
_iPrinted edition: _z9783642301070 |
| 830 | 0 |
_aSpringer Theses, Recognizing Outstanding Ph.D. Research, _x2190-5053 |
|
| 856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-3-642-30108-7 |
| 912 | _aZDB-2-PHA | ||
| 999 |
_c103127 _d103127 |
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