| 000 | 03535nam a22004455i 4500 | ||
|---|---|---|---|
| 001 | 978-1-4614-0548-1 | ||
| 003 | DE-He213 | ||
| 005 | 20140220083239.0 | ||
| 007 | cr nn 008mamaa | ||
| 008 | 120308s2012 xxu| s |||| 0|eng d | ||
| 020 |
_a9781461405481 _9978-1-4614-0548-1 |
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| 024 | 7 |
_a10.1007/978-1-4614-0548-1 _2doi |
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| 050 | 4 | _aTK7888.4 | |
| 072 | 7 |
_aTJFC _2bicssc |
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| 072 | 7 |
_aTEC008010 _2bisacsh |
|
| 082 | 0 | 4 |
_a621.3815 _223 |
| 100 | 1 |
_aMurali, Raghu. _eeditor. |
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| 245 | 1 | 0 |
_aGraphene Nanoelectronics _h[electronic resource] : _bFrom Materials to Circuits / _cedited by Raghu Murali. |
| 264 | 1 |
_aBoston, MA : _bSpringer US, _c2012. |
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| 300 |
_aXII, 265p. 143 illus., 106 illus. in color. _bonline resource. |
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| 336 |
_atext _btxt _2rdacontent |
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| 337 |
_acomputer _bc _2rdamedia |
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| 338 |
_aonline resource _bcr _2rdacarrier |
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| 347 |
_atext file _bPDF _2rda |
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| 505 | 0 | _aCMOS Performance Scaling -- Electronic Transport in Graphene -- Graphene Transistors -- Alternate State Variables for Graphene Transistors -- Transport of Novel State Variables -- Formation of Epitaxial Graphene -- Graphene Growth by CVD Methods -- Chemical Approaches to Produce Graphene Oxide and Related Materials -- Atomic Layer Deposition of Dielectrics on Graphene. | |
| 520 | _aThe rapid growth of the electronics industry can be attributed in large part to the scalability of the transistor. Continued scaling of transistor dimensions has enabled increased functionality with each new generation of integrated circuits. Historically, this scaling has followed Moore’s Law – which became a self-fulfilling prophecy – wherein the number of transistors on a chip is doubled every 18-24 months. However, a number of bottlenecks arise beyond c. 2020 that will impede this progress and this will lead to high heat dissipation in ICs, large power consumption, and low chip yield. Thus, beyond c. 2020, the electronics industry needs novel technologies that enable continued increases in chip functionality. Considering that the transition from research to manufacturing can take 10 years or more for novel technologies, there is considerable effort world-wide to identify next-generation enablers for electronics. Graphene is one of the most promising materials to replace Silicon, and this book discusses a number of aspects of graphene for nanoelectronics applications. With the growing interest in this material, this book serves as a spring-board for anyone trying to start working on this topic. The book contains in-depth discussions of graphene properties, transistors, novel state variables, interconnects, growth, and device fabrication. Describes the transport properties of graphene; Includes a detailed discussion of alternative state variables such as spin and excitons; Provides insight into graphene transistors and interconnects for both analog and digital electronics; Presents the latest advances in graphene growth by various techniques - epitaxial growth, chemical vapor deposition and chemical methods. | ||
| 650 | 0 | _aEngineering. | |
| 650 | 0 | _aSystems engineering. | |
| 650 | 0 | _aNanotechnology. | |
| 650 | 1 | 4 | _aEngineering. |
| 650 | 2 | 4 | _aCircuits and Systems. |
| 650 | 2 | 4 | _aElectronic Circuits and Devices. |
| 650 | 2 | 4 | _aNanotechnology. |
| 710 | 2 | _aSpringerLink (Online service) | |
| 773 | 0 | _tSpringer eBooks | |
| 776 | 0 | 8 |
_iPrinted edition: _z9781461405474 |
| 856 | 4 | 0 | _uhttp://dx.doi.org/10.1007/978-1-4614-0548-1 |
| 912 | _aZDB-2-ENG | ||
| 999 |
_c100871 _d100871 |
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