Normal view MARC view ISBD view

Rare-Earth Implanted MOS Devices for Silicon Photonics [electronic resource] : Microstructural, Electrical and Optoelectronic Properties / by Lars Rebohle, Wolfgang Skorupa.

By: Rebohle, Lars [author.].
Contributor(s): Skorupa, Wolfgang [author.] | SpringerLink (Online service).
Material type: materialTypeLabelBookSeries: Springer Series in Materials Science: 142Publisher: Berlin, Heidelberg : Springer Berlin Heidelberg, 2010Description: XVIII, 174 p. online resource.Content type: text Media type: computer Carrier type: online resourceISBN: 9783642144479.Subject(s): Optical materials | Materials Science | Optical and Electronic MaterialsDDC classification: 620.11295 | 620.11297 Online resources: Click here to access online
Contents:
Silicon-Based Light Emission -- Microstructure -- Electrical Properties -- Electroluminescence Spectra -- Electroluminescence Efficiency -- Stability and Degradation -- Applications.
In: Springer eBooksSummary: The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.
Tags from this library: No tags from this library for this title. Log in to add tags.
No physical items for this record

Silicon-Based Light Emission -- Microstructure -- Electrical Properties -- Electroluminescence Spectra -- Electroluminescence Efficiency -- Stability and Degradation -- Applications.

The book concentrates on the microstructural, electric and optoelectronic properties of rare-earth implanted MOS structures and their use as light emitters in potential applications. It describes the structural formation processes in the gate oxide during fabrication and under operation, how this microstructure development will affect the electrical device performance and how both microstructure and electrical characteristics determine the optoelectronic features of the light emitters. However, most of the discussed physical processes as well as the described fabrication methods and device characterization techniques are of general interest and are beyond the scope of this type of light emitter. The book will be of value to engineers, physicists, and scientists dealing either with Si based photonics in particular or optoelectronic device fabrication and characterization in general.

There are no comments for this item.

Log in to your account to post a comment.

2017 | The Technical University of Kenya Library | +254(020) 2219929, 3341639, 3343672 | library@tukenya.ac.ke | Haile Selassie Avenue