Effective Electron Mass in Low-Dimensional Semiconductors (Record no. 97081)

000 -LEADER
fixed length control field 03859nam a22005295i 4500
001 - CONTROL NUMBER
control field 978-3-642-31248-9
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140220082850.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 121009s2013 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783642312489
-- 978-3-642-31248-9
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-642-31248-9
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC176-176.9
072 #7 - SUBJECT CATEGORY CODE
Subject category code PNFS
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code SCI077000
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 530.41
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Bhattacharya, Sitangshu.
Relator term author.
245 10 - TITLE STATEMENT
Title Effective Electron Mass in Low-Dimensional Semiconductors
Medium [electronic resource] /
Statement of responsibility, etc by Sitangshu Bhattacharya, Kamakhya Prasad Ghatak.
264 #1 -
-- Berlin, Heidelberg :
-- Springer Berlin Heidelberg :
-- Imprint: Springer,
-- 2013.
300 ## - PHYSICAL DESCRIPTION
Extent XXIII, 535 p. 151 illus., 7 illus. in color.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
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-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
490 1# - SERIES STATEMENT
Series statement Springer Series in Materials Science,
International Standard Serial Number 0933-033X ;
Volume number/sequential designation 167
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Part I: Influence of Light Waves on the Effective Electron Mass (EEM) in Optoelectronic Semiconductors -- Part II: Influence of Quantum Confinement on the EEM in Non-Parabolic Semiconductors -- Part III: The EEM in Quantum Confined Superlattices of Non- Parabolic Semiconductors -- Part IV: Influence of Intense Electric Field on the EEM in Optoelectronic Semiconductors.
520 ## - SUMMARY, ETC.
Summary, etc This book deals with the Effective Electron Mass (EEM) in low dimensional semiconductors. The materials considered are quantum confined non-linear optical, III-V, II-VI, GaP, Ge, PtSb2, zero-gap, stressed, Bismuth, carbon nanotubes, GaSb, IV-VI, Te, II-V, Bi2Te3, Sb, III-V, II-VI, IV-VI semiconductors and quantized III-V, II-VI, IV-VI and HgTe/CdTe superlattices with graded interfaces and effective mass superlattices. The presence of intense electric field and the light waves change the band structure of optoelectronic semiconductors in fundamental ways, which have also been incorporated in the study of the EEM in quantized structures of optoelectronic compounds that control the studies of the quantum effect devices under strong fields. The importance of measurement of band gap in optoelectronic materials under strong electric field and external photo excitation has also been discussed in this context. The influence of crossed electric and quantizing magnetic fields on the EEM and the EEM in heavily doped semiconductors and their nanostructures is discussed. This book contains 200 open research problems which form the integral part of the text and are useful for both Ph. D aspirants and researchers in the fields of solid-state sciences, materials science, nanoscience and technology and allied fields in addition to the graduate courses in modern semiconductor nanostructures. The book is written for post graduate students, researchers and engineers, professionals in the fields of solid state sciences, materials science, nanoscience and technology, nanostructured materials and condensed matter physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Microwaves.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Materials.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical materials.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Solid State Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical and Electronic Materials.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoscale Science and Technology.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Structural Materials.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Microwaves, RF and Optical Engineering.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Quantum Optics.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Ghatak, Kamakhya Prasad.
Relator term author.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783642312472
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Springer Series in Materials Science,
-- 0933-033X ;
Volume number/sequential designation 167
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-642-31248-9
912 ## -
-- ZDB-2-PHA

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