GaP Heteroepitaxy on Si(100) (Record no. 96626)

000 -LEADER
fixed length control field 02883nam a22004575i 4500
001 - CONTROL NUMBER
control field 978-3-319-02880-4
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140220082841.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 131128s2013 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783319028804
-- 978-3-319-02880-4
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-319-02880-4
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC610.9-611.8
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD5
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008090
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Döscher, Henning.
Relator term author.
245 10 - TITLE STATEMENT
Title GaP Heteroepitaxy on Si(100)
Medium [electronic resource] :
Remainder of title Benchmarking Surface Signals when Growing GaP on Si in CVD Ambients /
Statement of responsibility, etc by Henning Döscher.
264 #1 -
-- Cham :
-- Springer International Publishing :
-- Imprint: Springer,
-- 2013.
300 ## - PHYSICAL DESCRIPTION
Extent XIV, 143 p. 80 illus., 33 illus. in color.
Other physical details online resource.
336 ## -
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-- txt
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-- computer
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-- rdamedia
338 ## -
-- online resource
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347 ## -
-- text file
-- PDF
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490 1# - SERIES STATEMENT
Series statement Springer Theses, Recognizing Outstanding Ph.D. Research,
International Standard Serial Number 2190-5053
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Introduction -- Experimental -- Si(100) surfaces in chemical vapor environments -- GaP(100) and InP(100) surfaces -- GaP growth on Si(100) and anti-phase disorder -- Conclusion.
520 ## - SUMMARY, ETC.
Summary, etc Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations. The impact of antiphase disorder on the heteroepitaxial growth surface provides quantitative optical in situ access to one of the most notorious defect mechanisms, even in the vapor phase ambient common for compound semiconductor technology. Precise control over the surface structure of the Si(100) substrates prior to III-V nucleation prevents the formation of antiphase domains. The hydrogen-based process ambient enables the preparation of anomalous double-layer step structures on Si(100), highly beneficial for subsequent III-V integration.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical materials.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optics, Optoelectronics, Plasmonics and Optical Devices.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical and Electronic Materials.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783319028798
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Springer Theses, Recognizing Outstanding Ph.D. Research,
-- 2190-5053
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-319-02880-4
912 ## -
-- ZDB-2-PHA

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