Toward Quantum FinFET (Record no. 96571)

000 -LEADER
fixed length control field 03580nam a22005175i 4500
001 - CONTROL NUMBER
control field 978-3-319-02021-1
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140220082840.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 131123s2013 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783319020211
-- 978-3-319-02021-1
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-319-02021-1
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC176.8.N35
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number T174.7
072 #7 - SUBJECT CATEGORY CODE
Subject category code TBN
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code SCI050000
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 620.5
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Han, Weihua.
Relator term editor.
245 10 - TITLE STATEMENT
Title Toward Quantum FinFET
Medium [electronic resource] /
Statement of responsibility, etc edited by Weihua Han, Zhiming M. Wang.
264 #1 -
-- Cham :
-- Springer International Publishing :
-- Imprint: Springer,
-- 2013.
300 ## - PHYSICAL DESCRIPTION
Extent XI, 363 p. 235 illus., 168 illus. in color.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
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-- computer
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-- rdamedia
338 ## -
-- online resource
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347 ## -
-- text file
-- PDF
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490 1# - SERIES STATEMENT
Series statement Lecture Notes in Nanoscale Science and Technology,
International Standard Serial Number 2195-2159 ;
Volume number/sequential designation 17
520 ## - SUMMARY, ETC.
Summary, etc This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a  roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical materials.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanoscale Science and Technology.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology and Microengineering.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Optical and Electronic Materials.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Nanotechnology.
700 1# - ADDED ENTRY--PERSONAL NAME
Personal name Wang, Zhiming M.
Relator term editor.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783319020204
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Lecture Notes in Nanoscale Science and Technology,
-- 2195-2159 ;
Volume number/sequential designation 17
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-319-02021-1
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