Photomodulated Optical Reflectance (Record no. 103127)

000 -LEADER
fixed length control field 02605nam a22004335i 4500
001 - CONTROL NUMBER
control field 978-3-642-30108-7
003 - CONTROL NUMBER IDENTIFIER
control field DE-He213
005 - DATE AND TIME OF LATEST TRANSACTION
control field 20140220083318.0
007 - PHYSICAL DESCRIPTION FIXED FIELD--GENERAL INFORMATION
fixed length control field cr nn 008mamaa
008 - FIXED-LENGTH DATA ELEMENTS--GENERAL INFORMATION
fixed length control field 120626s2012 gw | s |||| 0|eng d
020 ## - INTERNATIONAL STANDARD BOOK NUMBER
International Standard Book Number 9783642301087
-- 978-3-642-30108-7
024 7# - OTHER STANDARD IDENTIFIER
Standard number or code 10.1007/978-3-642-30108-7
Source of number or code doi
050 #4 - LIBRARY OF CONGRESS CALL NUMBER
Classification number QC610.9-611.8
072 #7 - SUBJECT CATEGORY CODE
Subject category code TJFD5
Source bicssc
072 #7 - SUBJECT CATEGORY CODE
Subject category code TEC008090
Source bisacsh
082 04 - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 537.622
Edition number 23
100 1# - MAIN ENTRY--PERSONAL NAME
Personal name Bogdanowicz, Janusz.
Relator term author.
245 10 - TITLE STATEMENT
Title Photomodulated Optical Reflectance
Medium [electronic resource] :
Remainder of title A Fundamental Study Aimed at Non-Destructive Carrier Profiling in Silicon /
Statement of responsibility, etc by Janusz Bogdanowicz.
264 #1 -
-- Berlin, Heidelberg :
-- Springer Berlin Heidelberg :
-- Imprint: Springer,
-- 2012.
300 ## - PHYSICAL DESCRIPTION
Extent XXIII, 201 p. 74 illus., 23 illus. in color.
Other physical details online resource.
336 ## -
-- text
-- txt
-- rdacontent
337 ## -
-- computer
-- c
-- rdamedia
338 ## -
-- online resource
-- cr
-- rdacarrier
347 ## -
-- text file
-- PDF
-- rda
490 1# - SERIES STATEMENT
Series statement Springer Theses, Recognizing Outstanding Ph.D. Research,
International Standard Serial Number 2190-5053
505 0# - FORMATTED CONTENTS NOTE
Formatted contents note Theory of Perturbation of the Reflectance -- Theory of Perturbation of the Refractive Index -- Theory of Carrier and Heat Transport in Homogeneously Doped Silicon -- Extension of the Transport Theory to Ultra-Shallow Doped Silicon Layers -- Assessment of the Model -- Application of the Model to Carrier Profling.
520 ## - SUMMARY, ETC.
Summary, etc One of the critical issues in semiconductor technology is the precise electrical characterization of ultra-shallow junctions. Among the plethora of measurement techniques, the optical reflectance approach developed in this work is the sole concept that does not require physical contact, making it suitable for non-invasive in-line metrology. This work develops extensively all the fundamental physical models of the photomodulated optical reflectance technique and introduces novel approaches that extend its applicability from dose monitoring towards detailed carrier profile reconstruction. It represents a significant breakthrough in junction metrology with potential for industrial implementation.
650 #0 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 14 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Semiconductors.
650 24 - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Applied and Technical Physics.
710 2# - ADDED ENTRY--CORPORATE NAME
Corporate name or jurisdiction name as entry element SpringerLink (Online service)
773 0# - HOST ITEM ENTRY
Title Springer eBooks
776 08 - ADDITIONAL PHYSICAL FORM ENTRY
Display text Printed edition:
International Standard Book Number 9783642301070
830 #0 - SERIES ADDED ENTRY--UNIFORM TITLE
Uniform title Springer Theses, Recognizing Outstanding Ph.D. Research,
-- 2190-5053
856 40 - ELECTRONIC LOCATION AND ACCESS
Uniform Resource Identifier http://dx.doi.org/10.1007/978-3-642-30108-7
912 ## -
-- ZDB-2-PHA

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