Miyazaki, Terunobu.
The Physics of Ferromagnetism [electronic resource] / by Terunobu Miyazaki, Hanmin Jin. - XVI, 482 p. 261 illus., 52 illus. in color. online resource. - Springer Series in Materials Science, 158 0933-033X ; . - Springer Series in Materials Science, 158 .
Part I: Foundation of magnetism -- Basis of magnetism -- Magnetism of atoms -- Magnetism of solids -- Exchange interaction -- Magnetic anisotropy -- Magnetostrictive effects -- Magnetic domain -- Micromagnetism -- Part II: Magnetic materials -- Soft magnetism -- Hard magnetism -- Part III: Spintronics -- Magnetoresistance effect -- Tunnel magnetoresistance effect -- Magnetoresistive random access memory (MRAM) -- Technologies that accompany the development of spintronics devices.
This book covers both basic physics of ferromagnetism such as magnetic moment, exchange coupling, magnetic anisotropy and recent progress in advanced ferromagnetic materials. Special interests are focused on NdFeB permanent magnets and the materials studied in the field of spintronics. In the latter, development of tunnel magnetoresistance effect through so called giant magnetoresistance effect is explained.
9783642255830
10.1007/978-3-642-25583-0 doi
Physics.
Magnetism.
Engineering.
Materials.
Physics.
Magnetism, Magnetic Materials.
Metallic Materials.
Structural Materials.
Nanotechnology and Microengineering.
QC750-766 QC764.5-766
538
The Physics of Ferromagnetism [electronic resource] / by Terunobu Miyazaki, Hanmin Jin. - XVI, 482 p. 261 illus., 52 illus. in color. online resource. - Springer Series in Materials Science, 158 0933-033X ; . - Springer Series in Materials Science, 158 .
Part I: Foundation of magnetism -- Basis of magnetism -- Magnetism of atoms -- Magnetism of solids -- Exchange interaction -- Magnetic anisotropy -- Magnetostrictive effects -- Magnetic domain -- Micromagnetism -- Part II: Magnetic materials -- Soft magnetism -- Hard magnetism -- Part III: Spintronics -- Magnetoresistance effect -- Tunnel magnetoresistance effect -- Magnetoresistive random access memory (MRAM) -- Technologies that accompany the development of spintronics devices.
This book covers both basic physics of ferromagnetism such as magnetic moment, exchange coupling, magnetic anisotropy and recent progress in advanced ferromagnetic materials. Special interests are focused on NdFeB permanent magnets and the materials studied in the field of spintronics. In the latter, development of tunnel magnetoresistance effect through so called giant magnetoresistance effect is explained.
9783642255830
10.1007/978-3-642-25583-0 doi
Physics.
Magnetism.
Engineering.
Materials.
Physics.
Magnetism, Magnetic Materials.
Metallic Materials.
Structural Materials.
Nanotechnology and Microengineering.
QC750-766 QC764.5-766
538